| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce power, and to enable high-speed recording in a semiconductor recording device including a plurality of multivalue flash memories. <P>SOLUTION: A recording page for composing an erasure block is classified into a first recording page, and a second recording page of which the write time is longer than that of the first recording page. A control means of flash memories divides a plurality of the flash memories into two groups, interleaves one recording page at a time for each group for write control, determines whether a recording page to be written is a first recording page or second recording page, starts writing another group with a lapse of a first prescribed time T1 after starting writing when it is determined that the recording page to be written is the first recording page, and starts writing another group with a lapse of the second prescribed time T2 longer than the first prescribed time T1 after starting writing when it is determined that the recording page to be written is the second recording page. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
