NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an accurately-processed nitride semiconductor device. SOLUTION: This nitride semiconductor device includes: a first nitride semiconductor layer 107 formed on a substrate 101; a defect introduction layer 108 formed on the first nitride semiconductor layer 107; and a second nitride semiconductor layer 109 formed in contact with a surface of the defect introduction layer 108 and having an opening for exposing the defect introduction layer 108. The defect introduction layer 108 is large in crystal defect density relative to the first nitride semiconductor layer 107 and the second nitride semiconductor layer 109. COPYRIGHT: (C)2011,JPO&INPIT