发明名称 METHOD OF FABRICATING PHASE SHIFT MASK HAVING HIGH CD UNIFORMITY
摘要 <p>PURPOSE: The method for manufacturing phase shift mask having the high CD uniformity is proceed the CD variation correction of the CD variation correction due to the transmittance deviation of blank-mask and phase inversion pattern to discrete. CONSTITUTION: The transmissivity distribution of the phase shift layer and light projecting board is measured at(301). The electronic beam exposure for the phase shift mask manufacture operates(302). The CD deviation due to the transmittance deviation is calculated(304). Correction data of the CD deviation is made(305).</p>
申请公布号 KR20100134445(A) 申请公布日期 2010.12.23
申请号 KR20090053069 申请日期 2009.06.15
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, MUN SIK
分类号 G03F1/26;H01L21/027 主分类号 G03F1/26
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