摘要 |
<p>PURPOSE: The method for manufacturing phase shift mask having the high CD uniformity is proceed the CD variation correction of the CD variation correction due to the transmittance deviation of blank-mask and phase inversion pattern to discrete. CONSTITUTION: The transmissivity distribution of the phase shift layer and light projecting board is measured at(301). The electronic beam exposure for the phase shift mask manufacture operates(302). The CD deviation due to the transmittance deviation is calculated(304). Correction data of the CD deviation is made(305).</p> |