| 摘要 |
In a method of producing a silicon single crystal through a Czochralski method, the pulling process includes a process of conducting a neck trial pulling for the formation of a neck portion after a seed crystal is dipped into a melt and before a neck actual pulling for the formation of a neck portion is conducted, and it is judged whether or not a temperature of the melt is a temperature suitable for the formation of the neck portion from a change of a diameter in the neck portion formed by the neck trial pulling. |
