ETCHING COMPOSITION, IN PARTICULAR FOR STRAINED OR STRESSED SILICON MATERIALS, METHOD FOR CHARACTERIZING DEFECTS ON SURFACES OF SUCH MATERIALS AND PROCESS OF TREATING SUCH SURFACES WITH THE ETCHING COMPOSITION,申请号KR20107025711-传众专利搜索

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发明名称	ETCHING COMPOSITION, IN PARTICULAR FOR STRAINED OR STRESSED SILICON MATERIALS, METHOD FOR CHARACTERIZING DEFECTS ON SURFACES OF SUCH MATERIALS AND PROCESS OF TREATING SUCH SURFACES WITH THE ETCHING COMPOSITION
摘要
申请公布号	KR20100134762(A)	申请公布日期	2010.12.23
申请号	KR20107025711	申请日期	2009.04.24
申请人	S.O.I TEC SILICON ON INSULATOR TECHNOLOGIES	发明人	ABBADIE ALEXANDRA;KOLBESEN BERND;MAEHLISS JOCHEN
分类号	G01N1/32;G01N21/88	主分类号	G01N1/32
代理机构		代理人
主权项
地址

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