| 摘要 |
<p>Disclosed is a semiconductor device comprising a first transistor and a second transistor. The first transistor comprises a first channel region (3a), a first gate insulating film (4a), a first gate electrode (5a), and a first extension region (8a). The second transistor has a higher threshold voltage than that of the first transistor, and comprises a second channel region (3b), a second gate insulating film (4b), a second gate electrode (5b), and a second extension region (8b). The second extension region (8b) contains shallow-junction-formed impurities, and has a junction depth smaller than that in the first extension region (8a).</p> |
