| 摘要 |
The metallic bump is directly formed on a semiconductor wafer's I/O pad without UBM. First, a zinc layer is formed on the I/O pad or an anti-oxidation layer of the I/O pad is selectively etched off. Then, an isolative layer and a copper foil are arranged sequentially in this order above the I/O pad. The isolative layer is originally in a liquid state or in a temporarily solid state and later permanently solidified. Then, a via above the I/O pad is formed by removing part of the isolative layer and the cooper foil. Subsequently, A thin metallic layer connecting the copper foil and the I/O pad is formed in the via and a plating resist on the copper foil is formed. Then, a metallic bump is formed from the via whose height is controlled by the plating resist. Finally, the plating resist and the copper foil are removed.
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