TECHNIQUES FOR FORMING A CONTACT TO A BURIED DIFFUSION LAYER IN A SEMICONDUCTOR MEMORY DEVICE

摘要

Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device are disclosed. In one embodiment, the techniques may be realized as a semiconductor memory device. The semiconductor memory device may comprise a substrate comprising an upper layer, and an array of dummy pillars formed on the upper layer and arranged in rows and columns. Each dummy pillar may extend upward from the upper layer and have a bottom contact that is electrically connected with the upper layer. The semiconductor memory device may also comprise an array of active pillars formed on the upper layer, and arranged in rows and columns. Each active pillar may extend upward from the upper layer and have active first, second and third regions. Each active pillar may also be electrically connected with the upper layer of the substrate.