| 摘要 |
<p>PURPOSE: By using the formed modeling based on the average contour, the optical proximity correction method about the wafer pattern is proceed the optical proximity correction. CONSTITUTION: The layout pattern is kiled in action in wafer and the wafer pattern is formed(110). Image data about the wafer pattern is extracted(120). Image data and layout pattern are overlapped(130). In the overlapped image data as described above, the average deviation value of the layout pattern and image data is calculated(140).</p> |
