发明名称 NON-VOLATILE MEMORY PROGRAMMABLE THROUGH AREAL CAPACITIVE COUPLING
摘要 A programmable non-volatile device is made which uses a floating gate that functions as a FET gate that overlaps a portion of a source/drain region. This allows a programming voltage for the device to be imparted to the floating gate through capacitive coupling, thus changing the state of the device. The invention can be used in environments such as data encryption, reference trimming, manufacturing ID, security ID, and many other applications.
申请公布号 US2010322010(A1) 申请公布日期 2010.12.23
申请号 US20100869469 申请日期 2010.08.26
申请人 LIU DAVID K Y 发明人 LIU DAVID K.Y.
分类号 G11C16/04 主分类号 G11C16/04
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