发明名称 |
Sensing element integrating silicon nanowire gated-diodes, manufacturing method and detecting system thereof |
摘要 |
The invention disclosed a sensing element integrating silicon nanowire gated-diodes with microfluidic channel, a manufacturing method and a detecting system thereof. The sensing element integrating silicon nanowire gated-diodes with a microfluidic channel comprises a silicon nanowire gated-diode, a plurality of reference electrodes, a passivation layer and a microfluidic channel. The reference electrodes are formed on the silicon nanowire gated-diodes, and the passivation layer having a surface decorated with chemical materials is used for covering the silicon nanowire gated-diodes, and the microfluidic channel is connected with the passivation layer. When a detecting sample is connected or absorbed on the surface of the passivation layer, the sensing element integrating silicon nanowire gated-diodes with the microfluidic channel can detect an electrical signal change.
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申请公布号 |
US2010321044(A1) |
申请公布日期 |
2010.12.23 |
申请号 |
US20090655109 |
申请日期 |
2009.12.23 |
申请人 |
NATIONAL CHIAO TUNG UNIVERSITY |
发明人 |
SHEU JENG-TZONG;CHEN CHEN-CHIA |
分类号 |
G01R27/08;G01R19/00;H01L21/02;H01L29/772 |
主分类号 |
G01R27/08 |
代理机构 |
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