SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A semiconductor memory device is provided to maximize sensing efficiency of a sense amplifier circuit precharged with a half level by implementing a push-pull operation by adding a pull-up circuit to a local sense amplifier circuit. CONSTITUTION: A second input and output line pair(GIO) is precharged with a half level of a power voltage. A second input and output line pair receives data from the first input and output line pair. The first input and output line pair is a local data input and output line pair. The second input and output line pair is a global data input and output line pair. A pull-up circuit(50) pulls up one of voltages with the pull level of the power voltage from the second input and output line pair in response to a control signal.