METHOD OF FABRICATING DUAL POLY-GATE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: The dual-poly gate formation method of the semiconductor device eliminates the chemical oxide film in which the boron is accumulated through the first cleaning. CONSTITUTION: The gate insulating layer(120) is formed on the semiconductor substrate(110). The semiconductor substrate has the first area(101) and the second part(102). The polysilicon layer doped to N type impurity ion is formed on the gate insulating layer. The polysilicon layer is heat-treated and the type polygate(131) and p-type polygate(132) are formed.