| 摘要 |
A semiconductor device according to an exemplary embodiment of the present invention includes a memory cell including an information storage portion including a capacitor upper electrode of a DRAM cell and a capacitor lower electrode formed below the upper electrode and an access transistor for controlling access to the information storage portion, a bit-line connected to the access transistor to write or read data to or from the information storage portion, a word line connected to a gate electrode of the access transistor to control the access transistor, and a capacitive element including an upper electrode made from a same layer as a first metal line formed above the capacitor upper electrode and a lower electrode made from a same layer as the capacitor upper electrode, the capacitive element being formed outside an area where the memory cell is formed.
|
