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发明名称
SILICON MONOCRYSTAL GROWTH METHOD
摘要
Silicon monocrystal growth is ended before a liquid surface of a melt reaches a corner portion of a quartz crucible, and thus dislocation of a silicon monocrystal can be reduced and reduction in yield can be prevented.
申请公布号
US2010319613(A1)
申请公布日期
2010.12.23
申请号
US20090866471
申请日期
2009.02.16
申请人
SUMCO CORPORATION
发明人
FUJIWARA TOSHIYUKI;HOSOI TAKEHIKO;NAKAMURA TSUYOSHI
分类号
C30B15/30;C30B15/10
主分类号
C30B15/30
代理机构
代理人
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