FILM DEPOSITION METHOD, PRETREATMENT DEVICE, AND TREATING SYSTEM

摘要

A film deposition method is disclosed in which a thin film comprising manganese is formed on an object to be treated (W) which has, formed on a surface thereof, an insulating layer (122) constituted of a low-k film and having a recess (2). The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which the surface of the hydrophilized insulating layer is subjected to a film deposition treatment with a manganese-containing material to form a thin film comprising manganese thereon. Thus, a thin film comprising manganese, e.g., an MnOx film, is efficiently formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.