发明名称 SUBSTRATE PROCESSING APPARATUS AND PRODUCING METHOD OF DEVICE
摘要 A substrate processor enables realization of a proper process by combining advantages of a remote plasma and a plasma generated in an entire processing chamber. The substrate processor includes a conductive member (10) which is installed surrounding a processing space (1) and grounded to the earth and a pair of electrodes (4) installed inside the conductive member (10). A primary coil of an insulating transformer (7) is connected to a high-frequency power supply unit (14) and a secondary coil is connected to the electrodes (4). A switch (13) is connected to the connection line connecting the secondary coil to the electrodes (4). By setting up/cutting off the connection of the line to the earth with use of the switch (13), the region where the plasma is generated in the processing space (1) can be changed.
申请公布号 US2010323507(A1) 申请公布日期 2010.12.23
申请号 US20100820917 申请日期 2010.06.22
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 TOYODA KAZUYUKI;SHIMA NOBUHITO;ISHIMARU NOBUO;KONNO YOSHIKAZU;TAKEBAYASHI MOTONARI;NODA TAKAAKI;MIZUNO NORIKAZU
分类号 H01L21/02;C23C16/50;H01F19/08;H01J37/32;H01L21/00 主分类号 H01L21/02
代理机构 代理人
主权项
地址