发明名称 |
DETECTION CIRCUIT FOR OVERDRIVE CONDITIONS IN A WIRELESS DEVICE |
摘要 |
A detection circuit that can accurately detect signal peak is described. In an exemplary design, the detection circuit includes a bias voltage generator and a MOS transistor. The bias voltage generator provides a bias voltage as a function of temperature. The MOS transistor receives an input RF signal and the bias voltage and provides a rectified signal, which may be a linear function of the input RF signal and may have reduced deviation with temperature due to the bias voltage. The bias voltage generator may generate the bias voltage based on a temperature-dependent current having a slope selected to reduce deviation in the rectified signal with temperature. An offset canceller may cancel a reference voltage from the rectified signal and provide an output signal. A bulk bias generator may generate a bulk voltage for the bulk of the MOS transistor as a function of temperature to improve operating speed at higher temperature. |
申请公布号 |
WO2010148369(A1) |
申请公布日期 |
2010.12.23 |
申请号 |
WO2010US39275 |
申请日期 |
2010.06.18 |
申请人 |
QUALCOMM INCORPORATED;SUDJIAN, DOUGLAS |
发明人 |
SUDJIAN, DOUGLAS |
分类号 |
H03F1/30;H03F3/19;H03G3/30;H04B1/04 |
主分类号 |
H03F1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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