发明名称 SILICON MONOCRYSTAL AND PRODUCTION METHOD FOR SAME
摘要 <p>A production method for silicon monocrystals includes: a step for growing a silicon monocrystal, wherein a seed crystal is brought into contact with a silicon melt and is then pulled up; a step for forming a dislocation-free section in the aforementioned silicon monocrystal, wherein dislocations occurring in said silicon monocrystal are advanced to the radial outside of said crystal and either removed, or annihilated in a loop shape; and a step for forming a straight trunk part, wherein the aforementioned silicon monocrystal, in which dislocation-free section has been formed, is pulled up and allowed to expand to a predetermined diameter.</p>
申请公布号 WO2010146853(A1) 申请公布日期 2010.12.23
申请号 WO2010JP04012 申请日期 2010.06.16
申请人 SUMCO CORPORATION;TAKASE, NOBUMITSU;SAITO, YASUHIRO;WATANABE, HIDEKI 发明人 TAKASE, NOBUMITSU;SAITO, YASUHIRO;WATANABE, HIDEKI
分类号 C30B15/00;C30B29/06 主分类号 C30B15/00
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