发明名称 |
SILICON MONOCRYSTAL AND PRODUCTION METHOD FOR SAME |
摘要 |
<p>A production method for silicon monocrystals includes: a step for growing a silicon monocrystal, wherein a seed crystal is brought into contact with a silicon melt and is then pulled up; a step for forming a dislocation-free section in the aforementioned silicon monocrystal, wherein dislocations occurring in said silicon monocrystal are advanced to the radial outside of said crystal and either removed, or annihilated in a loop shape; and a step for forming a straight trunk part, wherein the aforementioned silicon monocrystal, in which dislocation-free section has been formed, is pulled up and allowed to expand to a predetermined diameter.</p> |
申请公布号 |
WO2010146853(A1) |
申请公布日期 |
2010.12.23 |
申请号 |
WO2010JP04012 |
申请日期 |
2010.06.16 |
申请人 |
SUMCO CORPORATION;TAKASE, NOBUMITSU;SAITO, YASUHIRO;WATANABE, HIDEKI |
发明人 |
TAKASE, NOBUMITSU;SAITO, YASUHIRO;WATANABE, HIDEKI |
分类号 |
C30B15/00;C30B29/06 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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