发明名称 METHOD FOR EQUIPPING AN EPITAXY REACTOR
摘要 The invention relates to a method for providing a process chamber in a device for depositing layers on a substrate held by a susceptor in the process chamber in that process gases are introduced into the process chamber by a gas inlet element, in particular with the help of a carrier gas, said process gases decomposing into decomposition products therein, in particular on hot surfaces, said decomposition products comprising the components forming the layer. In order to boost the efficiency of the device in such a way that thick multilayer structures can be deposited so as to be replicated in directly consecutive process steps, it is proposed that a material, the optical reflectivity, optical absorptance, and optical transmittance of which each correspond to that of the coating deposited during the layer growth, be selected for the surface facing the process chamber at least of the wall of the process chamber opposite the susceptor.
申请公布号 WO2010145969(A1) 申请公布日期 2010.12.23
申请号 WO2010EP57976 申请日期 2010.06.08
申请人 AIXTRON AG;STRAUCH, GERHARD KARL 发明人 STRAUCH, GERHARD KARL
分类号 C30B25/08;C23C16/44;C30B35/00 主分类号 C30B25/08
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