发明名称 PROGRAMMING METHOD OF NONVOLATILE MEMORY DEVICE
摘要 PURPOSE: A programming method of a nonvolatile memory device is provided to improve the margins of logic status by programming program data on corresponding memory cells based on variable margins. CONSTITUTION: Program data is received(S110). Logic status corresponding to the received program data are detected(S120). The margins of the logic status are changed according to the detected result(S130). The program data is programmed on the corresponding memory cells based on the variable margins(S140). The memory cells store at least three bits.
申请公布号 KR20100134377(A) 申请公布日期 2010.12.23
申请号 KR20090052978 申请日期 2009.06.15
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JONG SOO;YOO, HAN WOONG;KIM, YONG JUNE;SON, HONG RAK;KONG, JUN JIN
分类号 G11C16/34;G11C16/10 主分类号 G11C16/34
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