| 摘要 |
<p>A method of producing wafer based solar panels, whereby the cells obtain an improved field passivation effect. A method for passivation of a surface comprises placing the silicon semiconductor in the deposition chamber of a dielectric chemical vapour deposition equipment, introducing precursor gases for forming a silicon nitride film on the exposed surface of the silicon semiconductor into the deposition chamber, initiating deposition of a silicon nitride film on the silicon semiconductor, doping the deposited silicon nitride film by introducing at least one gaseous compound containing an element which acts as an acceptor element into the precursor gases in the deposition chamber, and continuing depositing the silicon nitride film until the film obtains a thickness in the range of 2 - 500 nm. Preferably the acceptor dopant is boron. The invention also relates to solar cells comprising p-doped silicon nitride passivation layers produced by a similar method, whereby the silicon nitride film has an impurity density of between 109and 1015cm-2.</p> |
