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发明名称
POWER MOSFET HAVING A TRENCH GATE ELECTRODE AND METHOD OF MAKING THE SAME
摘要
申请公布号
EP1425802(B1)
申请公布日期
2010.12.22
申请号
EP20020737592
申请日期
2002.06.21
申请人
SILICONIX INCORPORATED
发明人
DARWISH, MOHAMED, N.
分类号
H01L29/78;H01L21/225;H01L21/336;H01L29/06;H01L29/08;H01L29/10
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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