| 摘要 |
<p>PURPOSE: A photovoltaic device manufacturing method is provided to improve the property of light-receiving layer while increasing the stabilization efficiency and decreasing the deterioration rate of the photovolatic device. CONSTITUTION: A first electrode(100) is formed on a substrate. More than one photoelectric transformation layers including the light-receiving layer is formed on the first electrode in the chamber. A second electrode is formed on the photoelectric transformation layer. The thickness of the light-receiving layer is 150 nm to 350 nm.</p> |
