| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE: A semiconductor device is provided to improve the reliability of the device using a silicon nitride film with the high blocking property as the barrier film with respect to copper wiring. CONSTITUTION: A thin film transistor is formed on an insulating substrate(200). The thin film transistor includes a semiconductor film and a gate electrode. A first silicon nitride film(202) is formed on the gate electrode. Wiring containing copper is formed on the first silicon nitride film. A second silicon nitride film(203) is formed on the wiring. The etching speeds of the first silicon nitride film and the second silicon nitride film are different. |
| 申请公布号 |
KR20100133932(A) |
申请公布日期 |
2010.12.22 |
| 申请号 |
KR20100119707 |
申请日期 |
2010.11.29 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TAKAYAMA TORU;YAMAZAKI SHUNPEI;AKIMOTO KENGO |
| 分类号 |
H01L29/786;G02F1/136;H01L21/314;H01L21/318;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L29/423;H01L29/49 |
主分类号 |
H01L29/786 |
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