发明名称 Silicon carbide dimpled substrate
摘要 <p>A substrate is disclosed. It comprises: a first layer having a first main surface and a second main surface opposing the first main surface; an active layer on the first main surface of the first layer; an array of dimples extending from the second main surface into the first layer toward the first main surface; and a metallization layer overlying the second main surface of the first layer and within the dimples.</p>
申请公布号 EP2264741(A2) 申请公布日期 2010.12.22
申请号 EP20100182703 申请日期 2007.01.10
申请人 CREE, INC. 发明人 HARRIS, CHRISTOPHER;BASCERI, CEM;GEHRKE, THOMAS;BALKAS, CENGIZ
分类号 H01L21/04;H01L29/06;H01L29/417;H01L33/00;H01L33/32;H01L33/38 主分类号 H01L21/04
代理机构 代理人
主权项
地址