发明名称 |
ALN BULK SINGLE CRYSTAL, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING ALN SINGLE CRYSTAL BULK |
摘要 |
<p>An object of the present invention is to provide, even when a single crystal of a material other than AlN is used as a crystal, an AlN bulk single crystal having fewer defects and high quality, a method for producing such an AlN bulk single crystal, and a semiconductor device. A feature is to select, as a surface 1a of a hexagonal single crystal substrate serving as a seed crystal 1, a plane inclined at an angle of 10° to 80° with respect to the C-plane ( Fig. 1(a) ), and to grow an AlN single crystal 2 as a growth plane 2a on the surface 1a by a sublimation method ( Fig. 1(b) ).</p> |
申请公布号 |
EP2264228(A1) |
申请公布日期 |
2010.12.22 |
申请号 |
EP20090725314 |
申请日期 |
2009.03.26 |
申请人 |
JFE MINERAL COMPANY, LTD.;FRIEDRICH-ALEXANDER-UNIVERSITAET ERLANGEN-NUERNBERG;CRYSTAI-N GMBH |
发明人 |
NAGATA, SHUNRO;WINNACKER, ALBRECHT;EPELBAUM, BORIS M;BICKERMANN, MATTHIAS;FILIP, OCTAVIAN;HEIMANN, PAUL |
分类号 |
C30B23/02;C30B29/40 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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