METHOD FOR TEST THE MEMORY DEVICE

摘要

PURPOSE: A method for testing a memory device is provided to easily detect a leakage current in a sensing amplifier by controlling the activation time of a switch unit and the activation time of a sensing amplifier in a USD test. CONSTITUTION: When a switching unit(203) is activated, the switching unit transmits voltage difference between positive and negative bit lines to a sensing amplifier in response to a test command. When the switching unit is inactivated, the sensing amplifier(204,205) is activated. The voltage difference between positive and negative bit lines is amplified. The leakage current is detected in the sensing amplifier through the voltage difference between positive and negative bit lines.