发明名称 |
Formation of a slot in a silicon substrate |
摘要 |
A slot is formed that reaches through a first side of a silicon substrate to a second side of the silicon substrate. A trench is laser patterned. The trench has a mouth at the first side of the silicon substrate. The trench does not reach the second side of the silicon substrate. The trench is dry etched until a depth of at least a portion of the trench is extended approximately to the second side of the silicon substrate (12). A wet etch is performed to complete formation of the slot. The wet etch etches silicon from all surfaces of the trench. |
申请公布号 |
US7855151(B2) |
申请公布日期 |
2010.12.21 |
申请号 |
US20070894316 |
申请日期 |
2007.08.21 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
KOMMERA SWAROOP K.;BHOWMIK SIDDHARTHA;ORAM RICHARD J.;RAMAMOORTHI SRIRAM;BRAUN DAVID M. |
分类号 |
H01L21/461 |
主分类号 |
H01L21/461 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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