| 摘要 |
PURPOSE: A semiconductor device manufacturing method is provided to simultaneously improve a short channel effect and a gate control power by enabling a gate to cover the upper side and the entire sidewall of a second activated region. CONSTITUTION: A first active region(23) is defined on a substrate(21) by using an element isolation layer. A hard mask pattern is formed on the substrate where the first active region and the element isolation layer are formed. The hard mask pattern forms a second active region(23A) having a fin structure. The hard mask pattern forms a hole pattern which covers a part of the gate predetermined region in the first active region.
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