| 摘要 |
The thin film transistor for an organic light emitting diode includes a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern having first source and drain contact holes, a gate electrode on the gate insulating layer, the gate electrode being between the first source and drain contact holes, an interlayer insulating layer covering the gate electrode, having second source and drain contact holes, source and drain electrode in the second source and drain contact holes, insulated from the gate electrode and electrically connected to the crystalline semiconductor pattern by first and second metal patterns in the first source and drain contact holes, respectively, wherein the gate electrode, the first metal pattern in the first source contact hole and the second metal pattern in the first drain contact hole are each made of a same material. |
