发明名称 |
Gap filling method and method for forming semiconductor memory device using the same |
摘要 |
A gap filling method and a method for forming a memory device, including forming an insulating layer on a substrate, forming a gap region in the insulating layer, and repeatedly forming a phase change material layer and etching the phase change material layer to form a phase change material layer pattern in the gap region.
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申请公布号 |
US7855145(B2) |
申请公布日期 |
2010.12.21 |
申请号 |
US20070783975 |
申请日期 |
2007.04.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JIN-IL;LEE CHOONG-MAN;CHO SUNG-LAE;LIM SANG-WOOK;PARK HYE-YOUNG;PARK YOUNG-LIM |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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