发明名称 |
Method for self-aligned doubled patterning lithography |
摘要 |
Various embodiments of the invention provide systems and methods for semiconductor device fabrication and generation of photomasks for patterning a target layout of line features and large features. Embodiments of the invention are directed towards systems and methods using self-aligned double pattern to define the target layout of line features and large features.
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申请公布号 |
US7856613(B1) |
申请公布日期 |
2010.12.21 |
申请号 |
US20080264853 |
申请日期 |
2008.11.04 |
申请人 |
CADENCE DESIGN SYSTEMS, INC. |
发明人 |
WELING MILIND;HUCKABAY JUDY;SEZGINER ABDURRAHMAN |
分类号 |
G06F17/50;G03F1/00;G06F19/00;G21K5/00 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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