发明名称 |
Integrated circuit, method of manufacturing an integrated circuit, and memory module |
摘要 |
According to one embodiment of the present invention, an integrated circuit including a plurality of memory cells is provided. Each memory cell includes a resistivity changing memory element which includes a top electrode, a bottom electrode, and resistivity changing material being disposed between the top electrode and the bottom electrode. Each resistivity changing memory element is at least partially surrounded by a thermal insulating structure. The thermal insulating structures are arranged such that the dissipation of heat generated within the resistivity changing memory elements into the environment of the resistivity changing memory elements is lowered.
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申请公布号 |
US7855435(B2) |
申请公布日期 |
2010.12.21 |
申请号 |
US20080047167 |
申请日期 |
2008.03.12 |
申请人 |
QIMONDA AG;ALTIS SEMICONDUCTOR, SNC |
发明人 |
KLOSTERMANN ULRICH;LEUSCHNER RAINER |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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