| 发明名称 |
A TARGET MATERIAL, A SOURCE, AN EUV LITHOGRAPHIC APPARATUS AND A DEVICE MANUFACTURING METHOD USING THE SAME |
| 摘要 |
<p>A target material is configured to be used in a source constructed and arranged to generate a radiation beam having a wavelength in an extreme ultraviolet range. The target material includes a Gd-based composition configured to modify a melting temperature of Gd.</p> |
| 申请公布号 |
KR20100133443(A) |
申请公布日期 |
2010.12.21 |
| 申请号 |
KR20107023496 |
申请日期 |
2009.03.20 |
| 申请人 |
ASML NETHERLANDS B.V. |
发明人 |
KRIVTSUN VLADIMIR MIHAILOVITC;BANINE VADIM YEVGENYEVICH;BLEEKER ARNO JAN;IVANOV VLADIMIR VITALEVITCH;KOSHELEV KONSTANTIN NIKOLAEVITCH;MOORS JOHANNES HUBERTUS JOSEPHINA;CHURILOV SERGEY;GLUSHKOV DENIS |
| 分类号 |
G03F7/004;G03F7/20;H01L21/027;H05G2/00 |
主分类号 |
G03F7/004 |
| 代理机构 |
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