发明名称 |
Method of forming metal lines and bumps for semiconductor devices |
摘要 |
Provided is a method of forming conductors (e.g., metal lines and/or bumps) for semiconductor devices and conductors formed from the same. First and second seed metal layers may be formed. At least one mask may be formed on a portion on which a conductor is to be formed. An exposed portion may be oxidized. The oxidized portion may be removed. A conductive structure may be formed on an upper surface of a portion which is not oxidized. The conductors may be metal lines and/or bumps. The conductive structures may be solder balls.
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申请公布号 |
US7855144(B2) |
申请公布日期 |
2010.12.21 |
申请号 |
US20060589717 |
申请日期 |
2006.10.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SOON-BUM;SIM SUNG-MIN;JANG DONG-HYEON;CHUNG JAE-SIK;OH SE-YONG |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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