发明名称 |
SiC crystal and semiconductor device |
摘要 |
The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.
|
申请公布号 |
US7855385(B2) |
申请公布日期 |
2010.12.21 |
申请号 |
US20080152016 |
申请日期 |
2008.05.12 |
申请人 |
MEIJO UNIVERSITY;NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY |
发明人 |
KAMIYAMA SATOSHI;AMANO HIROSHI;AKASAKI ISAMU;IWAYA MOTOAKI;YOSHIMOTO MASAHIRO;KINOSHITA HIROYUKI |
分类号 |
H01L31/0312 |
主分类号 |
H01L31/0312 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|