发明名称 FABRICATION METHOD OF OFTOELECTRONIC DEVICE USING NANO IMPRINT LITHOGRAPHY PROCESS
摘要 <p>PURPOSE: A fabrication method of a photoelectric device using a nano imprint lithography process is provided to form a light scattering layer having a nano-pattern on the surface of the photoelectric device by performing a nano imprint lithography process. CONSTITUTION: A sol solution including a precursor having the difference of refractive index of 0.4 from a transparent substrate and is coated on the transparent substrate(S110). A gel solution is annealed to form light scattering layer of poly-crystal(S130). A stamp having a nano-pattern and the sol solution are aligned on the transparent substrate. The stamp and transparent substrate are separated from each other.</p>
申请公布号 KR20100133136(A) 申请公布日期 2010.12.21
申请号 KR20090051865 申请日期 2009.06.11
申请人 KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION 发明人 LEE, HEON;YOON, KYUNG MIN;YANG, KI YEON;BYEON, KYEONG JAE
分类号 H01L21/027;B82B3/00 主分类号 H01L21/027
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