SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREOF

摘要

PURPOSE: A semiconductor substrate, a semiconductor device, and a manufacturing methods thereof are provided to reduce manufacturing costs for an LED and a laser diode by using a GaN substrate. CONSTITUTION: A first semiconductor layer is formed on a substrate. A metallic material layer is formed on a semiconductor layer by a predetermined pattern. A second semiconductor layer is formed on the semiconductor layer and metallic material layer. A hollow(102a) is formed on a first semiconductor layer under the metallic material layer.