SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE: A semiconductor integrated circuit device is provided to reduce a leakage current without destroying data. CONSTITUTION: The source electrode of a first P channel type metal oxide semiconductor transistor(MP102) is connected to a power line. The source electrode of the first N channel MOS transistor(MN102) is connected to the source line. The drain electrode of the first N channel MOS transistor is connected to the drain electrode of the first P channel type metal oxide semiconductor transistor. The source electrode of the second P channel type metal oxide semiconductor transistor is connected to the power line. The source electrode of the second N channel MOS transistor is connected to the source line. The drain electrode of the second N channel MOS transistor is connected to the drain electrode of the second P channel type metal oxide semiconductor transistor. The drain electrode of the second N channel MOS transistor is connected to the gate electrode of the first N channel MOS transistor and the first P channel type.