METHOD FOR GROWING OF VERTICAL NANOWIRE USING ANODIC OXIDE WITH MATRIX ARRAY OF PORES

摘要

PURPOSE: A method for growing vertical nanowire is provided to obtain nanowire with uniformity and regularity by forming air gaps with matrix arrangement and nanowire in air gaps. CONSTITUTION: A method for growing vertical nanowire comprises the steps of forming a thin film for a template on a substrate(10); forming depressions with a matrix arrangement inside the upper side of the thin film for the template; forming an anodized film with air gaps extended from the depressions in a substrate direction by anodizing the thin film for the template; growing nanowires(17) within the air gaps of anodized film; and removing the anodized film.