ERROR CORRECTING CODES FOR INCREASED STORAGE CAPACITY IN MULTILEVEL MEMORY DEVICES

摘要

PURPOSE: An error correcting codes for increased storage capacity in multilevel memory devices are provided to select parameters which increase the storage capacity of a cell matrix while maintaining desirable operating properties. CONSTITUTION: An external code sequence is generated based on partial input data by using an external encoder(608), and an internal code sequence is generated based on the partial external code sequence by using an internal encoder(612). The internal code sequence includes first parity information bits and second non-parity information bits. The second non-parity information bits are described in fourth non-parity cells of the non-volatile memory device(616).