SEMICONDUCTOR SUBSTARTE, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor substrate, a method of fabricating the same, a semiconductor device, and method of fabricating the same are provided to implement a GaN substrate which is a plane and easily exfoliated with low costs. CONSTITUTION: A first semiconductor layer is formed on a substrate(100). A metallic material layer is formed on the first semiconductor layer as a pattern. A second semiconductor layer is formed in the first semiconductor layer and the metallic material layer. The second GaN layer(104) is 1/2 thicker than a Ta layer(103).