ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE ARRAY SUBSTRATE
摘要
<p>PURPOSE: An array substrate and a method for manufacturing the array substrate are provided to improve the reliability of a fabrication process by enabling a normal dry etching process through the change of an oxide film of a first device pattern into an easily vaporized fluoride film. CONSTITUTION: A gate electrode(124) is formed on a base substrate(110), and a gate insulation film(130) includes a step shape on the base substrate including the gate electrode. A semiconductor pattern is formed on the gate insulation film and has a step coverage with the gate insulation film. An ohmic contact pattern(144) is formed on the semiconductor pattern and has the identical pattern to the semiconductor pattern, excluding a channel unit.</p>
申请公布号
KR20100132167(A)
申请公布日期
2010.12.17
申请号
KR20090050842
申请日期
2009.06.09
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
CHOI, SHIN IL;KIM, SANG GAB;JEONG, YU GWANG;CHIN, HONG KEE