| 摘要 |
PURPOSE: A group III nitride semiconductor gas phase growth apparatus is provided to supply the surface of a substrate in a reactor with the mixed gas which optimized the amount and concentration of gas by comprising a mixed gas discharging hole which discharges two or three kind of the gases selected out of ammonia, organic metal chemical, and carrier gas with arbitrary ratio. CONSTITUTION: A susceptor(2) holds a substrate. A heater(4) heats the substrate. A reactor(5) comprises the susceptor and a gap of the susceptor. A source gas inducing unit(6) supplies the reactor with the source material gas. A mixing gas outlet(8) discharges the ammonia, the organic metallic compound, and carrier gas with the arbitrary ratio.
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