发明名称 |
Nanotube Semiconductor Devices |
摘要 |
A semiconductor device includes a first semiconductor layer and a second semiconductor layer of opposite conductivity type, a first epitaxial layer of the first conductivity type formed on sidewalls of the trenches, and a second epitaxial layer of the second conductivity type formed on the first epitaxial layer where the second epitaxial layer is electrically connected to the second semiconductor layer. The first epitaxial layer and the second epitaxial layer form parallel doped regions along the sidewalls of the trenches, each having uniform doping concentration. The second epitaxial layer has a first thickness and a first doping concentration and the first epitaxial layer and a mesa of the first semiconductor layer together having a second thickness and a second average doping concentration where the first and second thicknesses and the first doping concentration and second average doping concentrations are selected to achieve charge balance in operation. |
申请公布号 |
US2010314659(A1) |
申请公布日期 |
2010.12.16 |
申请号 |
US20090484170 |
申请日期 |
2009.06.12 |
申请人 |
ALPHA & OMEGA SEMICONDUCTOR, INC. |
发明人 |
YILMAZ HAMZA;WANG XIAOBIN;BHALLA ANUP;CHEN JOHN;CHANG HONG |
分类号 |
H01L29/739;H01L29/78 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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