| 摘要 |
PURPOSE: A method of data reading a non volatile memory device is provided to reduce a bit line precharge and evaluation time by precharging a bit line through a common source line and extracting data. CONSTITUTION: A sensing voltage is inputted to a common source line. The voltage of a bit line is maintained 0V or precharged in step of changing the voltage of a bit line. Data is stored in a selected memory cell and extracted by sensing the voltage of the bit line.
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