| 摘要 |
PURPOSE: A dry-etching method by low pressure capacitively coupled plasma is provided to reduce costs for an etching process by dry-plasma etching a member including gallium through low vacuum capacitively coupled type BCl3 / N2 plasma. CONSTITUTION: The pressure inside a vacuum chamber is 50~300 mTorr. The power supplied to a chuck is 10~500 W. An etching gas is a mixed gas with pure BCl3 or BCl3 and N2. The material is comprised of one of GaAs, AlGaAs, GaP, GaSb and GaN. The mixing ratio of N2 to BCl3 is 0~70 %.
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