| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a heat treatment apparatus that forms films having a uniform thickness on a plurality of substrates. <P>SOLUTION: The heat treatment apparatus 10 includes a processing chamber 44 configured to grow silicon carbide (SiC) films on wafers 14, a boat 30 for supporting a plurality of wafers 14 in the processing chamber 44 by supporting the wafers 14 substantially horizontally in a vertical direction, a heating unit installed in the processing chamber 44, and a gas supply nozzle 60 configured to supply a reaction gas. The heating unit includes a susceptor 48 configured to cover at least part of the boat 30 within the processing chamber 44, and a susceptor wall 160 disposed between the susceptor 48 and the boat 30. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
