| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor deposition method wherein an ALD gives superior conformality, film formation speed, and uniformity in comparison with a CVD. SOLUTION: A plurality of sequential steps 140 are conducted in a reaction chamber in order to form ultra high quality silicon-containing compound layers including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as a silicon precursor 100. The silicon precursor is removed from the reaction chamber 110. A silicon nitride layer is then formed by nitriding the silicon layer 120. A nitrogen reactant is removed from the reaction chamber 110. By repeating these steps 100, 110, 120 and 130, a silicon nitride layer of a desired thickness is formed. COPYRIGHT: (C)2011,JPO&INPIT |
